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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Solo~~STP100N8F6~~

Ny sary dia mety hisolo tena.
Jereo ny famaritana manokana amin'ny antsipirian'ny vokatra.

~~toerana tena~~

STP100N8F6 - STMicroelectronics

Manufacturer Part Number: STP100N8F6

Manufacturer: STMicroelectronics

Allelco Part Number: 32D-STP100N8F6

Modely Ecad

Famaritana fizarana: MOSFET N-CH 80V 100A TO220

Famaritana amin'ny antsipiriany

Package: TO-220-3

Takela-daza: STP100N8F6.pdf

RoHs Status

~~Mampitaha~~

Ao amin'ny staoky: 53640

Specifications

STP100N8F6 Famaritana momba ny teknolojia
STMicroelectronics - STP100N8F6 Famaritana momba ny teknika, toetra, toetra, tarehimarika ary ampahany miaraka amin'ny voafaritra mitovy amin'ny STMicroelectronics - STP100N8F6

Toetran'ny vokatra	Ny sandan'ny toetra
Manufacturer	STMicroelectronics
Vgs (th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
teknolojia	MOSFET (Metal Oxide)
Package Device Device	TO-220
Series	STripFET™ F6
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Power Dissipation (Max)	176W (Tc)
Package / Case	TO-220-3
Fonosana	Tube

Toetran'ny vokatra	Ny sandan'ny toetra
Operating Temperature	-55°C ~ 175°C (TJ)
Tendrombohitra	Through Hole
Ny Capacitance Input (Ciss) (Max) @ Vds	5955 pF @ 25 V
Fiantohana fitaterana (Qg) (Max) @ Vgs	100 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds)	10V
Mialà amin'ny loharanom-bahoaka (Vdss)	80 V
Current - mitete tsy tapaka (Id) @ 25 ° C	100A (Tc)
Laharana vokatra fototra	STP100

Ampahany amin'ny voafaritra mitovy

Ny lafiny telo amin'ny ankavanana dia manana fepetra manokana mitovy amin'ny STMicroelectronics STP100N8F6.

Toetran'ny vokatra
Part Number	STP100N8F6	STP100NF04	STP105N3LL	STP100N10F7
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
FET Feature	-	-	-	-
Fiantohana fitaterana (Qg) (Max) @ Vgs	100 nC @ 10 V	150 nC @ 10 V	42 nC @ 4.5 V	61 nC @ 10 V
Series	STripFET™ F6	Automotive, AEC-Q101, STripFET™ II	DeepGATE™, STripFET™ VI	DeepGATE™, STripFET™ VII
Vgs (th) (Max) @ Id	4V @ 250µA	4V @ 250µA	2.5V @ 250µA	4.5V @ 250µA
Mialà amin'ny loharanom-bahoaka (Vdss)	80 V	40 V	30 V	100 V
Vgs (Max)	±20V	±20V	±20V	±20V
teknolojia	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Ny Capacitance Input (Ciss) (Max) @ Vds	5955 pF @ 25 V	5100 pF @ 25 V	3100 pF @ 25 V	4369 pF @ 50 V
Power Dissipation (Max)	176W (Tc)	300W (Tc)	140W (Tc)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	175°C (TJ)	-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds)	10V	10V	4.5V, 10V	10V
Laharana vokatra fototra	STP100	STP100	STP105	STP100
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Tendrombohitra	Through Hole	Through Hole	Through Hole	Through Hole
Fonosana	Tube	Tube	Tube	Tube
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V	4.6mOhm @ 50A, 10V	3.5mOhm @ 40A, 10V	8mOhm @ 40A, 10V
Current - mitete tsy tapaka (Id) @ 25 ° C	100A (Tc)	120A (Tc)	80A (Tc)	80A (Tc)
Package Device Device	TO-220	TO-220	TO-220	TO-220

STP100N8F6 Datasheet PDF

Ampidino sy STP100N8F6 PDF Datasheets sy STMicroelectronics Documation ho an'ny STP100N8F6 - STMicroelectronics.

Datasheets: STP100N8F6.pdf
PCN Design / Specification: Mult Dev Adv Material Notice 8/Apr/2019.pdf
PCN Packaging: Traceability 06/Mar/2017.pdf
Fivoriambe PCN / fiaviany: New Molding Compound 13/Sep/2019.pdf

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OSEANIA	Novely zelandy	5
AZIA	INDE	4
AZIA	Japana	4
Moyen Orient	Isiraely	6

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Fiampangana entana (kg)	Reference DHL (USD $)
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32D-STP100N8F6

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