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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Solo~~NVB082N65S3F~~

Ny sary dia mety hisolo tena.
Jereo ny famaritana manokana amin'ny antsipirian'ny vokatra.

~~toerana tena~~

NVB082N65S3F - onsemi

Manufacturer Part Number: NVB082N65S3F

Manufacturer: onsemi

Allelco Part Number: 32D-NVB082N65S3F

Modely Ecad

Famaritana fizarana: MOSFET N-CH 650V 40A D2PAK-3

Famaritana amin'ny antsipiriany

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Takela-daza: NVB082N65S3F.pdf

RoHs Status

~~Mampitaha~~

Ao amin'ny staoky: 5997

Specifications

NVB082N65S3F Famaritana momba ny teknolojia
onsemi - NVB082N65S3F Famaritana momba ny teknika, toetra, toetra, tarehimarika ary ampahany miaraka amin'ny voafaritra mitovy amin'ny onsemi - NVB082N65S3F

Toetran'ny vokatra	Ny sandan'ny toetra
Manufacturer	onsemi
Vgs (th) (Max) @ Id	5V @ 4mA
Vgs (Max)	±30V
teknolojia	MOSFET (Metal Oxide)
Package Device Device	D²PAK-3 (TO-263-3)
Series	Automotive, AEC-Q101, SuperFET® III, FRFET®
Rds On (Max) @ Id, Vgs	82mOhm @ 20A, 10V
Power Dissipation (Max)	313W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fonosana	Tape & Reel (TR)

Toetran'ny vokatra	Ny sandan'ny toetra
Operating Temperature	-55°C ~ 150°C (TJ)
Tendrombohitra	Surface Mount
Ny Capacitance Input (Ciss) (Max) @ Vds	3410 pF @ 400 V
Fiantohana fitaterana (Qg) (Max) @ Vgs	81 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds)	10V
Mialà amin'ny loharanom-bahoaka (Vdss)	650 V
Current - mitete tsy tapaka (Id) @ 25 ° C	40A (Tc)
Laharana vokatra fototra	NVB082

Ampahany amin'ny voafaritra mitovy

Ny lafiny telo amin'ny ankavanana dia manana fepetra manokana mitovy amin'ny onsemi NVB082N65S3F.

Toetran'ny vokatra
Part Number	NVB082N65S3F	NVB110N65S3F	NVB25P06T4G	NVBG040N120SC1
Manufacturer	onsemi	onsemi	onsemi	onsemi
Vgs (Max)	±30V	±30V	±15V	+25V, -15V
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mialà amin'ny loharanom-bahoaka (Vdss)	650 V	650 V	60 V	1200 V
Series	Automotive, AEC-Q101, SuperFET® III, FRFET®	Automotive, AEC-Q101, SuperFET® III, FRFET®	Automotive, AEC-Q101	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs	82mOhm @ 20A, 10V	110mOhm @ 15A, 10V	82mOhm @ 25A, 10V	56mOhm @ 35A, 20V
Fiantohana fitaterana (Qg) (Max) @ Vgs	81 nC @ 10 V	58 nC @ 10 V	50 nC @ 10 V	106 nC @ 20 V
Fonosana	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
FET Type	N-Channel	N-Channel	P-Channel	N-Channel
Drive Voltage (Max Rds On, Min Rds)	10V	10V	10V	20V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Package Device Device	D²PAK-3 (TO-263-3)	D²PAK-3 (TO-263-3)	D²PAK	D2PAK-7
Power Dissipation (Max)	313W (Tc)	240W (Tc)	120W (Tj)	357W (Tc)
Current - mitete tsy tapaka (Id) @ 25 ° C	40A (Tc)	30A (Tc)	27.5A (Ta)	60A (Tc)
Tendrombohitra	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Laharana vokatra fototra	NVB082	NVB110	NVB25P	NVBG040
Ny Capacitance Input (Ciss) (Max) @ Vds	3410 pF @ 400 V	2560 pF @ 400 V	1680 pF @ 25 V	1789 pF @ 800 V
teknolojia	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	SiCFET (Silicon Carbide)
FET Feature	-	-	-	-
Vgs (th) (Max) @ Id	5V @ 4mA	5V @ 3mA	4V @ 250µA	4.3V @ 10mA

NVB082N65S3F Datasheet PDF

Ampidino sy NVB082N65S3F PDF Datasheets sy onsemi Documation ho an'ny NVB082N65S3F - onsemi.

Datasheets: NVB082N65S3F.pdf
Fampahalalana momba ny tontolo iainana: onsemi REACH.pdf onsemi RoHS.pdf
PCN Design / Specification: Improve FAB Process 26/APR/2023.pdf Mult Dev DS/Doc Chgs 1/Oct/2020.pdf
PCN Packaging: PACKING BOX CHANGE 13/Jul/2021.pdf
Fivoriambe PCN / fiaviany: Assembly Change 09/May/2023.pdf

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Region	Firenena	Fotoana lojika (andro)
Amerika	Etazonia	5
Amerika	BREZILA	7
Eoropa	Alemaina	5
	fanjakana mitambatra	4
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OSEANIA	AOSTRALIA	6
OSEANIA	Novely zelandy	5
AZIA	INDE	4
AZIA	Japana	4
Moyen Orient	Isiraely	6

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Fiampangana entana (kg)	Reference DHL (USD $)
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Email
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onsemi
32D-NVB082N65S3F

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